Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
73 (1998), S. 2072-2074
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
By etching a distributed-feedback grating directly into the Al-free optical confinement region of a 100 μm stripe InGaAs/InGaP/GaAs diode laser, 1.1 W cw front-facet output power has been obtained at 0.893 μm with a spectral full width at half maximum of 0.9 Å. These devices have 1 mm long cavities and shallow gratings with a coupling coefficient, κ∼7 cm−1. The combination of long device length and low grating coupling results in both efficient operation as well as a longitudinally uniform field profile. As a result, all excited lateral modes oscillate at the same longitudinal cavity resonance to high power levels. Using shallow gratings etched in an InGaP upper confinement layer permits the growth of a high-quality cladding layer over the grating surface yielding excellent device performance. Facet-coated (5%/95%) devices demonstrate external differential quantum efficiencies of 51% and peak wallplug efficiencies of 32% at 1.1 W cw output power. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.122381
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