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Ultralow-threshold (50 A/cm2) strained single-quantum-well GaInAsSb/AlGaAsSb lasers emitting at 2.05 μm (1998)

Turner, G. W. ; Choi, H. K. ; Manfra, M. J.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 72 (1998), S. 876-878

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Strained single-quantum-well, broadened-waveguide GaInAsSb/AlGaAsSb diode lasers have exhibited room-temperature threshold current densities as low as 50 A/cm2, one of the lowest values reported for diode lasers at room temperature. These lasers, grown by molecular beam epitaxy, have emission wavelengths of ∼2.05 μm, characteristic temperature of 65 K, internal quantum efficiency of 95%, and internal loss coefficient of 7 cm−1. Single-ended cw power of 1 W is obtained for a 100-μm aperture. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.120922

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