Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
70 (1997), S. 315-317
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Cubic-boron nitride (c-BN) thin films were grown by dual ion beam sputter deposition and the growth mechanism was studied using angle resolved in-situ XPS (x-ray photoelectron spectroscopy) analysis. The π bond shake-up satellite of the B 1s peak, which is observed only in a hexagonal boron nitride (h-BN) phase, appeared in the XPS spectrum obtained for the surface layer of the c-BN film. This can be a clear evidence that the c-BN phase grows via the transformation of an initially formed h-BN phase and the transformation is induced by the compressive stress accumulated in the subsurface region during ion bombardment. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.118402
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