Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
68 (1996), S. 1138-1140
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The carrier profile for MBE grown In0.35Ga0.65As/GaAs multiquantum well laser structures with nominally undoped and beryllium-doped active regions was determined by using the capacitance–voltage (C–V) technique at room temperature. A simple theoretical model was used to extract the impurity concentration and the quantum-well carrier density from the experimental profiles. We obtained a high carrier concentration in nominally undoped devices caused by a strong growth temperature dependent Be diffusion from the p-cladding layer, and no difference between doped samples with different nominal dopant location. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.115738
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