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Electrical characterization of low-temperature Al0.3Ga0.7As using n-i-n structures (1996)

Verma, A. K. ; Tu, J. ; Smith, J. S. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 68 (1996), S. 699-701

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Through temperature-dependent conductivity measurements, we show evidence of a deep trap level in low-temperature (LT) Al0.3Ga0.7As layers with an activation energy of ∼0.96 eV. This energy is near that of EL2-like defects found previously in "normal'' epitaxial Al0.3Ga0.7As. It is also considerably larger than the 0.70 eV value typically associated with defects in LT GaAs, which may explain the observed large resistivity ((approximately-greater-than)1011 Ω cm) in LT Al0.3Ga0.7As. Current transient spectroscopy (CTS) of these samples yields a deep level activation energy of 1.01 eV, in close agreement with the value obtained from conductivity measurements. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.116596

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