Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
68 (1996), S. 394-396
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report an in situ electron diffraction measurement which allows In0.53Ga0.47As to be lattice matched to InP during growth. This method uses analysis of the dynamics of intensity oscillations during electron diffraction to determine when lattice matched growth occurs. With this method we demonstrate closely lattice matched ternary alloys; InGaAs on InP, GaInP on GaAs, and quarternary alloys of InAlGaAs on InP. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.116696
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