Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
67 (1995), S. 264-266
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
We investigated the ultrafast energy relaxation of photoexcited minority electrons in highly doped p-GaAs by means of femtosecond time resolved luminescence (Δt〈90 fs). Our experiments allow the first observation of the extremely fast cooling of minority electrons within the Γ-valley. The electron mean energy decreases within 150 fs from 150 meV down to less than 50 meV. The total energy loss rate reaches values higher than 10−7 W per electron, representing the highest energy loss rates of electrons observed to date in monocrystalline semiconductors. Ensemble Monte Carlo simulations show that the electron-hole scattering is responsible for these high energy loss rates. © 1995 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.114777
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