Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
66 (1995), S. 472-474
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report here the characteristic features of a newly developed dielectric encapsulant cap layer, which after adequate thermal treatments, leads to a reproducible local alloy disorder in several III–V quantum well (QW) structures. Data are presented to demonstrate its universality, namely, its ability to promote alloy-disorder free of charge carriers either on group III or group V sublattice depending on the type of the QW structure. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.114060
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