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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 472-474 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report here the characteristic features of a newly developed dielectric encapsulant cap layer, which after adequate thermal treatments, leads to a reproducible local alloy disorder in several III–V quantum well (QW) structures. Data are presented to demonstrate its universality, namely, its ability to promote alloy-disorder free of charge carriers either on group III or group V sublattice depending on the type of the QW structure. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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