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Fabrication of multilayer single-electron tunneling devices (1995)

Visscher, E. H. ; Verbrugh, S. M. ; Lindeman, J. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 66 (1995), S. 305-307

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A reliable process has been developed for the fabrication of multilevel single-electron tunneling (SET) devices. Using this process, we have fabricated SET devices with Au-SiO-Al and Al-AlOx-SiO-Al overlap capacitors. The SET transistors exhibit voltage gain and, despite the complex device structure, have a low charge noise (7×10−5e/(square root of)Hz). Moreover, the use of overlap capacitors in SET devices results in a reduction of cross capacitances down to 8%. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.113526

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