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  • 1
    Electronic Resource
    Electronic Resource
    Optimization of island size in single electron tunneling devices: Experiment and theory (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2830-2836 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the influence of island size on the operation of single electron tunneling (SET) devices. The self-heating, self-capacitance, and charge noise have been determined for six SET transistors with island sizes varying from 0.17×0.17 μm2 to 5×5 μm2. The I–V characteristics of these devices can be well fit to a model where the heat flow from the device is limited by the electron-phonon coupling. The best fit to this model was obtained with an electron-phonon coupling parameter of Σ=0.3×109 W K−5 m−3. We have found a clear indication that the charge noise of our SET transistors, which are fabricated with the usual techniques, increases with increasing island size. These results have been used to estimate the thermal error of a single electron turnstile assuming that self-heating and charge noise in the turnstile are the same as in our SET transistors. The accuracy of the turnstile is dramatically reduced by the self-heating and the charge noise. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360083
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  • 2
    Electronic Resource
    Electronic Resource
    Broadband single-electron tunneling transistor (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2014-2016 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A single-electron tunneling transistor has been directly coupled on-chip to a high electron mobility transistor. The high electron mobility transistor (HEMT) is used as an impedance matching circuit with a gain close to unity. The HEMT transformed the 1.4 MΩ output impedance of the single electron tunneling (SET) transistor by two orders of magnitude down to 5 kΩ, increasing its bandwidth to 50 kHz. This circuit makes it possible to observe the motion of individual electrons at high frequencies. The requirements for the bandwidth in high frequency applications is discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115622
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  • 3
    Electronic Resource
    Electronic Resource
    Fabrication of multilayer single-electron tunneling devices (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 305-307 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A reliable process has been developed for the fabrication of multilevel single-electron tunneling (SET) devices. Using this process, we have fabricated SET devices with Au-SiO-Al and Al-AlOx-SiO-Al overlap capacitors. The SET transistors exhibit voltage gain and, despite the complex device structure, have a low charge noise (7×10−5e/(square root of)Hz). Moreover, the use of overlap capacitors in SET devices results in a reduction of cross capacitances down to 8%. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113526
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  • 4
    Electronic Resource
    Electronic Resource
    Single Cooper pair pump (1991)
    Springer
    The European physical journal 85 (1991), S. 349-355 
    Details
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We have operated a Cooper pair pump, a linear array of superconducting tunnel junctions in which single Cooper pairs are moved under the influence of ac signals applied to two gate electrodes. The pump is based on the Coulomb blockade of charge tunneling. Because of the small junction capacitance precisely one Cooper pair is transferred per ac cycle. The current-voltage characteristics of this device show current plateaus close to 2ef, wheref is the frequency of the ac voltages. Deviations are explained in terms of Zener tunneling, Cooper pair co-tunneling, and sporadic quasiparticle tunneling.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01307630
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