Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
67 (1995), S. 935-937
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We demonstrate the operation of a surface emitting light emitting diode. The wavelength of the emitted light can be tuned with the applied voltage. The device is based on a p-GaAs and n-Ga1−xAlxAs heterojunction containing an inversion layer in the p side and, GaAs quantum wells in the n side, and, is referred to as HELLISH-II (hot electron light emitting and lasing in semiconductor heterojunction). The device utilizes hot electron longitudinal transport and, therefore, light emission is independent of the polarity of the applied voltage. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.114700
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