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Broadband single-electron tunneling transistor (1996)

Visscher, E. H. ; Lindeman, J. ; Verbrugh, S. M. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 68 (1996), S. 2014-2016

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A single-electron tunneling transistor has been directly coupled on-chip to a high electron mobility transistor. The high electron mobility transistor (HEMT) is used as an impedance matching circuit with a gain close to unity. The HEMT transformed the 1.4 MΩ output impedance of the single electron tunneling (SET) transistor by two orders of magnitude down to 5 kΩ, increasing its bandwidth to 50 kHz. This circuit makes it possible to observe the motion of individual electrons at high frequencies. The requirements for the bandwidth in high frequency applications is discussed. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.115622

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