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p+ doping of Si by Al diffusion upon annealing Al/n-Si(111)7×7 (1995)

Wen, H. J. ; Prietsch, M. ; Bauer, A. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 66 (1995), S. 3010-3012

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A novel method for the formation of a p+-layer underneath a Si(111)7×7 surface is presented. It is based on annealing of an epitaxial Al/n-Si(111) interface up to complete desorption of the Al film. This leads to a strong potential variation within the substrate, as observed in Si-2p core-level photoemission spectra with variable sampling depth, while scanning-tunneling microscopy reveals an unchanged 7×7 reconstructed surface. These observations are consistent with a p+ doping of (4±2)×1018/cm3 and a lowering of the surface Fermi level by (0.06±0.02) eV. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.114260

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