Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
66 (1995), S. 3010-3012
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A novel method for the formation of a p+-layer underneath a Si(111)7×7 surface is presented. It is based on annealing of an epitaxial Al/n-Si(111) interface up to complete desorption of the Al film. This leads to a strong potential variation within the substrate, as observed in Si-2p core-level photoemission spectra with variable sampling depth, while scanning-tunneling microscopy reveals an unchanged 7×7 reconstructed surface. These observations are consistent with a p+ doping of (4±2)×1018/cm3 and a lowering of the surface Fermi level by (0.06±0.02) eV. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.114260
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