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Doped microcrystalline silicon growth by high frequency plasmas (1994)

Hollingsworth, R. E. ; Bhat, P. K.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 64 (1994), S. 616-618

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The growth of boron- and phosphorus-doped microcrystalline silicon films on glass using plasma enhanced chemical vapor deposition at high rf frequencies was examined for substrate temperatures from room temperature to 400 °C. Microcrystalline growth was obtained by heavy hydrogen dilution of silane with phosphine or trimethylboron as the doping gas. A maximum conductivity of 8 (Ω cm)−1 was obtained at a substrate temperature of 180 °C for p-type films and 74 (Ω cm)−1 at 210 °C for n-type films.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.111067

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