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Cryogenic field-effect transistor with single electronic charge sensitivity (1994)

Mar, D. J. ; Westervelt, R. M. ; Hopkins, P. F.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 64 (1994), S. 631-633

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We have fabricated matched pairs of cryogenic field-effect transistors with input charge sensitivity qn=0.01 e/(square root of)Hz at T=1.3 K, low input capacitance 0.4 pF, and extremely high input resistance in excess of 1015 Ω. Low leakage permits dc charge-coupled operation for times up to ∼103 s. The channel noise is characterized by a flat spectrum at high frequencies, and 1/f noise below a corner frequency fc〈1 kHz. These devices can resolve charge differences as small as qn(square root of)fc=0.4e.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.111072

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