Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
59 (1991), S. 105-107
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In semiconductor materials with S-shaped negative differential conductivity, pattern formation due to current filament formation is observed. We present experimental results of filamentation in Si p-i-n diodes and propose an equivalent circuit to describe the observed structures. The electrical circuit is based upon numerical results of electrical field−current density characteristics in p-i-n diodes. From this model we derive an equation, which describes the current density distribution in the device as a solitary structure. The proposed analytical solution, which is well known from the theory of pulse propagation in nerve fibers, leads to expressions for the peak current density and the width of a filament.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.105559
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