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Direct imaging of δ-doped layers in GaAs (1990)

Ourmazd, A. ; Cunningham, J. ; Jan, W. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 56 (1990), S. 854-856

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We report the direct imaging of Be δ-doped layers in GaAs, in the concentration range (0.5–2)×1014/cm2, comparing samples grown by gas source molecular beam epitaxy (MBE) and conventional MBE. The gas source MBE δ layers are ∼15 A(ring) wide, and at least at high concentrations, consist of clusters ∼12 A(ring) in diameter. At 2×1014 Be atoms/cm2, the MBE δ layer is an order of magnitude wider than that grown at the same temperature by gas source MBE. Our results imply that layers with Be concentrations in excess of 1021/cm3 can be fabricated by gas source MBE.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.103185

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