Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
56 (1990), S. 490-492
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Results of growth of InAs on a superconducting TlCaBaCuO (2-1-2-2) thin film are reported. The InAs was grown by molecular beam migration-enhanced epitaxy at a substrate temperature of 250 °C. The Tc(zero) of the Tl film before and after InAs deposition was 106 and 100 K, respectively. X-ray diffraction and reflection electron microscopy studies showed the InAs to be polycrystalline, having grains in the 300 A(ring) size range. This is the first report of deposition of a III-V semiconductor on superconductor, without significant degradation of Tc.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.103297
Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |