Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
56 (1990), S. 1128-1130
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
GaInAs/InP quantum wells differing in thickness between 1 and 20 monolayers (1 monolayer≈2.93 A(ring)) have been grown by low-pressure (50 mbar) metalorganic vapor phase epitaxy and investigated by 2 K photoluminescence. To our knowledge this is the first observation of the one monolayer quantum well. Well-resolved photoluminescence peaks were observed and were attributed to recombination of excitons bound to quantum wells of defined monolayer thickness. The growth rate could be adjusted to produce a one monolayer quantum well. Its photoluminescence peak was observed at 1.245 eV, corresponding to a quantum confinement shift of 434 meV. The full width at half maximum of this peak was only 8 meV.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.102589
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