Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
55 (1989), S. 1891-1893
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report preparation of high quality AlSb/InAs/GaSb heterostructures by molecular beam epitaxy. Using this crystal growth technique we have fabricated unipolar AlSb tunnel emitter transistors and used them to explore electron transport as a function of electron injection energy Ei across a 100-A(ring)-thick InAs quantum well base. A low-energy threshold for collector current is observed for Ei〉φbc, where φbc is the base/collector potential barrier. A maximum collection efficiency of ∼0.9 is obtained at Ei(approximately-equal-to)1.5 eV and at larger values of Ei, the collection efficiency decreases due to wave function symmetry and velocity mismatch across the abrupt base/collector heterointerface.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.102163
| Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |
