Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
55 (1989), S. 1567-1568
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Dislocations in In0.1Ga0.9As/GaAs multilayers grown on Si substrates have been examined by using transmission electron microscopy. It is found that two types of misfit dislocations exist at the interfaces of multilayers which are composed of layers thicker than the critical thickness (hc). One is a 60° dislocation and the other is a pure edge dislocation. It is considered that a 60° dislocation can glide to adjacent layers from the interface, while a pure edge dislocation can also go out of the interface. The stress field caused by closely located dislocations introduces bowing of dislocation lines followed by cross slipping.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.102246
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