Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
54 (1989), S. 2427-2428
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
The values of interfacial recombination velocities in GaAs/AlGaAs double heterostructures and quantum wells grown by molecular beam epitaxy with and without superlattice cladding layers are obtained with photoluminescence time-decay measurements. The authors show that superlattice layers reduce the interfacial recombination velocity from 330 cm/s, the value for double heterostructures with alloy cladding layers, to 40 cm/s, and that they have small effect on the GaAs bulk lifetime.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.101097
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