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  • 1
    Electronic Resource
    Electronic Resource
    MOVPE Growth Window for High-Nitrogen GaAsN Alloy Films for Long Wavelength Emission (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Advanced materials research Vol. 31 (Nov. 2007), p. 218-220 
    Details
    ISSN: 1662-8985
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The high quality GaAsN epitaxial films with the typical thickness of 150-200 nm and the Ncontents up to 5.5% were grown by MOVPE. The maximum N content of 2.75% at the growthtemperature of 550 oC was enhanced to 5.1% at 500 oC and 5.5% at 450 oC. The lower growthtemperature may efficiently suppress desorption of N atoms from the growing surface. The narrowhigh-resolution X-ray diffraction peaks and the clear Pendellösung fringes indicate that the GaAsNfilms with high uniformity and fairly flat interface were obtained. The 6K-photoluminescence (PL)peak energy of the GaAsN films was varied from 1.38 eV to 1.01 eV with increasing N content up to2.75%, but no near-band-edge emission was observed in the higher-N-content films, indicating theincrease of nonradiative recombination centers caused by the N-related lattice imperfections. Besides,after post growth thermal annealing at 650 oC for 2 min, PL spectrum shows that the near-band-edgeemission as low as 0.97 eV (1.3 μm) have been achieved with the film of 5.1% N
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/40/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.31.218.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    A Comparison of the Structural Quality of High-In Content InGaAsN Films Grown on InGaAs Pseudosubstrate and on GaAs Substrate (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Advanced materials research Vol. 31 (Nov. 2007), p. 221-223 
    Details
    ISSN: 1662-8985
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The use of an InGaAs buffer layer was applied to the growth of thick InxGa1-xAs1-yNy layerswith higher In contents (x 〉 30%). In order to obtain the lattice-matched InGaAsN layer having thebandgap of 1.0 eV, the In0.2Ga0.8As was chosen. In this work, the In0.3Ga0.7As0.98N0.02 layers weresuccessfully grown on closely lattice-matched In0.2Ga0.8As buffer layers (InGaAsN/InGaAs).Structural quality of such layers is discussed in comparison with those of the In0.3Ga0.7As0.98N0.02layers grown directly on the GaAs substrate (InGaAsN/GaAs). Based on the results of transmissionelectron microscopy, the misfit dislocations (MDs), which are located near the InGaAsN/GaAsheteroepitaxial interface, are visible by their strain contrast. On the other hand, no generation of theMDs is evidenced in the InGaAsN layer grown on the In0.2Ga0.8As pseudosubstrate. Our resultsdemonstrate that a reduction of misfit strain though the use of the pseudosubstrate made possible thegrowth of high In-content InGaAsN layers with higher crystal quality to extend the wavelength ofInGaAsN material
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/40/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.31.221.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Structural Investigation of Cubic-Phase InN on GaAs (001) Grown by MBE under In- and N-Rich Growth Conditions (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Advanced materials research Vol. 31 (Nov. 2007), p. 215-217 
    Details
    ISSN: 1662-8985
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: We have investigated effect of the In- and N-rich growth conditions on the structuralmodification of cubic-phase InN (c-InN) films grown on GaAs (001) substrates by rf-plasmaassistedmolecular beam epitaxy (RF-MBE). High resolution x-ray diffraction (HRXRD) andRaman scattering measurements were performed to examine the hexagonal phase generation in thec-InN grown films. It is evident that higher crystal quality c-InN films with higher cubic phasepurity (~82%) were achieved under the In-rich growth condition. On the other hand, for the N-richgrowth condition, the c-InN films exhibited higher incorporation of hexagonal phase, which isgenerated in the cubic phase through the incidental stacking faults on the c-InN (111) planes. Ourresults demonstrate that the In-rich growth condition plays a critical role in the growth of highquality c-InN films with higher cubic phase purity
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/40/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.31.215.pdf
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  • 4
    Electronic Resource
    Electronic Resource
    Optical Transitions in InGaPN/GaP Single Quantum Wells on GaP(100) Substrates by MOVPE (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Advanced materials research Vol. 31 (Nov. 2007), p. 224-226 
    Details
    ISSN: 1662-8985
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Optical transitions in the In0.050Ga0.950P0.975N0.025/GaP lattice-matched single quantumwells (SQWs) with different well widths (LZ = 1.6 - 6.4 nm) have been investigated bylow-temperature photoluminescence (PL) and PL-excitation (PLE). PL spectra showed the strongvisible emission from the samples which attracted to a variety of optoelectronic device applicationssuch as light emitting and laser diodes. Comparing to the bulk film, the PL peak position and thefundamental absorption edge of PLE spectra exhibit blue-shift, which is corresponded to the quantumconfinement effect by the well. Comparison between the absorption edge of PLE spectra and the finitesquare well calculation demonstrate that the effective bandgap energy of the InGaPN/GaP system ismight be originated mainly from the N-related localized states
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/40/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.31.224.pdf
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of Substrate-Surface Orientation on the N Incorporation in GaAsN Films on GaAs Grown by MOVPE (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Advanced materials research Vol. 55-57 (Aug. 2008), p. 825-828 
    Details
    ISSN: 1662-8985
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The GaAs1-xNx alloy semiconductor has been grown on GaAs (001), (111)A and (011) substrates by metalorganic vapor-phase epitaxy. High resolution X-ray diffraction and Raman scattering were employed to examine the effective N content and the growth rate, as a function of the substrate-surface orientation. The growth rate, which was assessed though the clear Pendellösung fringes, and the N content were found to change dramatically with the substrate-surface orientations. The N content was determined in the order (111)A 〉 (001) 〉 (011). While, the growth rate is in the order, (001) 〉 (011) 〉 (111)A. The effect of substrate-surface orientation on the N incorporation found in the present study is interpreted in terms of the difference in the growth rate on each surface orientation and the number of dangling bonds with which the N atoms can be trapped on the growing surface. Our results show that controlled nitrogen incorporating for GaAsN is successfully achieved and can be applied to the fabrication of some novel structures such as a spontaneous N content modulated structure, which is applicable to high performance long wavelength laser diodes
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/41/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.55-57.825.pdf
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  • 6
    Electronic Resource
    Electronic Resource
    InGaPN/GaP Lattice-Matched Single Quantum Wells on GaP (001) Grown by MOVPE (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Advanced materials research Vol. 55-57 (Aug. 2008), p. 821-824 
    Details
    ISSN: 1662-8985
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Highly luminescence lattice-matched InxGa1-xP1-yNy/GaP single quantum wells (SQWs) on GaP (001) substrates were successfully grown by metalorganic vapor phase epitaxy (MOVPE). High-resolution X-ray diffraction measurements established that the lattice-matched InxGa1-xP1-yNy/GaP SQWs with various In (x = 0.050, 0.080, 0.135) and N (y = 0.025, 0.048, 0.071) contents were realized with excellent crystal quality and fairly flat interfaces. The results of photoluminescence (PL) and PL-excitation (PLE) showed the strong visible light emission (yellow to red emission) from the SQWs. With increasing In and N contents, the PL peak position and the PLE absorption edge exhibited the red-shift to lower energy, indicating the lowering of the InGaPN conduction band edge. The conduction band offset (∆Ec) of the InGaAPN/GaP quantum structure was estimated to be as high as 270 to 480 meV, which depends on the In and N contents in the well. Our results demonstrate that this novel InGaPN/GaP SQW system appropriates for the fabrication of light-emitting and laser diodes
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/41/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.55-57.821.pdf
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  • 7
    Electronic Resource
    Electronic Resource
    Thermodynamics of type A"1"-"xB"xC"1"-"yD"y III-V quaternary solid solutions
    Amsterdam : Elsevier
    Journal of Physics and Chemistry of Solids 43 (1982), S. 1071-1086 
    Details
    ISSN: 0022-3697
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-3697(82)90223-2
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  • 8
    Electronic Resource
    Electronic Resource
    Application of picosecond light pulses generated from an AlGaInP visible diode laser for photoluminescence decay measurement of GaAs/AlGaAs quantum wells (1988)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 663-665 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The photoluminescence decay of GaAs/AlGaAs quantum wells was successfully measured at room temperature by using 660-nm picosecond light pulses from an AlGaInP diode laser driven by short pulse current. Our experimental results reveal that picosecond light pulses from visible diode lasers may be widely applicable, in place of mode-locked gas, solid-state, or dye lasers, for studying the fast carrier recombination properties of many kinds of materials including GaAs and AlGaAs in the wavelength region of deep red to infrared.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139805
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  • 9
    Electronic Resource
    Electronic Resource
    Reduction in interfacial recombination velocity by superlattice buffer layers in GaAs/AlGaAs quantum well structures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2427-2428 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The values of interfacial recombination velocities in GaAs/AlGaAs double heterostructures and quantum wells grown by molecular beam epitaxy with and without superlattice cladding layers are obtained with photoluminescence time-decay measurements. The authors show that superlattice layers reduce the interfacial recombination velocity from 330 cm/s, the value for double heterostructures with alloy cladding layers, to 40 cm/s, and that they have small effect on the GaAs bulk lifetime.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101097
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  • 10
    Electronic Resource
    Electronic Resource
    Cleaved cavity stimulated emission from an optically pumped cubic GaN/AlGaN heterostructure grown on GaAs (100) substrate (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1931-1933 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cubic GaN/AlGaN double heterostructure was grown on semi-insulating GaAs (100) substrate by metalorganic vapor phase epitaxy. Strong stimulated emission was observed from the cleaved edge of the optically pumped cubic GaN/AlGaN heterostructure at 15 K. The cavity was formed simply by cleaving the substrate. The stimulated emission was demonstrated by the superlinear increase of the output intensity and the highly transverse electric polarized nature. The stimulated emission showed an obvious redshift compared with the spontaneous one. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122326
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