ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We prepared Er silicide films on (111) Si by (1) deposition of Er and contact reaction at 380 °C or (2) vacuum codeposition of Er and Si maintaining the flux ratio close to 1:2. Subsequent annealing at temperatures up to 900 °C yielded monocrystalline, continuous layers, whose properties were examined by means of low-energy electron diffraction, Auger spectroscopy (in situ) and (ex situ), x-ray and high-energy electron diffraction, and Rutherford backscattering. Method 2 was shown to give better results. The films had a hexagonal AlB2 structure with Si deficiency up to 20%, which is consistent with formerly published results on Si vacancy formation. We showed that the film structure had an additional periodicity of 15 A(ring) along the 〈110〉 orientations of Si and of 6 A(ring) along the 〈112〉 orientations of Si. We demonstrated a feasibility of Si reepitaxy on Er silicide deposited on (111) Si, thus fabricating a novel semiconductor/metal/semiconductor epitaxial heterostructure.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101517
