ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
AlxGa1−xAs 0.2〈x〈0.4 epilayers were grown by metalorganic vapor phase epitaxy in the temperature range of 850–950 °C. It has been experimentally shown that epitaxial growth at high temperatures enhances the free-carrier concentration and causes unusual behavior of deep centers for Sn-doped AlxGa1−xAs. From the temperature dependence of the Hall carrier density, and assuming multivalley conduction, an activation energy of the donor of 10 meV was deduced. Furthermore, these samples did not exhibit persistent photoconductivity. Besides, when all parameters of the epitaxy were kept constant, the aluminum fraction in the epitaxial layers slightly increases as the growth temperature increases.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.100775