ZIB

Treffer pro Seite

Treffer 1 - 1 | 1 Treffer

Alles auswählen Exportieren

Digitale Medien

Evaluation of modulating field of photoreflectance of surface-intrinsic-n+ type doped GaAs by using photoinduced voltage (2002)

Lee, W. Y. ; Chien, J. Y. ; Wang, D. P.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 91 (2002), S. 4101-4104

zur Merkliste hinzufügen auf der Merkliste

Details

ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Photoreflectance (PR) of surface-intrinsic-n+ type doped GaAs has been measured for various power densities of pump laser. The spectra exhibited many Franz–Keldysh oscillations, whereby the strength of electric field F in the undoped layer can be determined. The thus obtained Fs are subject to photovoltaic effect and are less than built-in field Fbi. In the previous work we have obtained the relation F(approximate)Fbi−δF/2 when δF(very-much-less-than)Fbi by using electroreflectance to simulate PR, where δF is the modulating field of the pump beam. In this work a method was devised to evaluate δF by using photoinduced voltages Vs and, hence, the relation can be verified by PR itself. The δFs obtained by Vs are also consistent with those of using imaginary part of fast Fourier transform of PR spectra. © 2002 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1453492

Bibliothek	Standort	Signatur	Band/Heft/Jahr	Verfügbarkeit

Andere fanden auch interessant ...

Artikel (Nationallizenzen)

Volltext

Treffer 1 - 1 | 1 Treffer