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Organic field-effect transistors with polarizable gate insulators (2002)

Katz, Howard E. ; Hong, X. Michael ; Dodabalapur, Ananth ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 91 (2002), S. 1572-1576

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: A quasi-stable threshold voltage (Vt) shift is imparted onto field-effect transistors (FETs) with organic semiconductors and polymer dielectrics. Adjustment of Vt from accumulation mode to zero or depletion mode is demonstrated for both p-channel and n-channel FETs, and is accomplished by applying a depletion voltage to the gate prior to device operation. Hydrophobic dielectrics and dopant-resistant semiconductors were advantageous. A pixel circuit that utilizes this nonvolatile memory element is proposed. © 2002 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1427136

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