Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
88 (2000), S. 5760-5763
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The energy positions of the optical transitions in both GaN and ZnO were investigated when the samples were excited simultaneously with a HeCd laser and an Ar+ ion laser. The increased number of free electrons excited by the Ar+ ion laser will effectively screen both the free exciton and bound exciton transitions, resulting in a blueshift. The increased number of free electrons also produces many-body effects, which lead to a reduction of the band gap energy and thus a redshift. The resultant of screening and renormalization results in a redshift of the optical transitions in ZnO but a nearly vanishing shift in GaN. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1320026
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