ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Co/Cu multilayers deposited on an amorphous Si (a-Si) buffer layer revealed good crystallinity and lower resistivity than ones deposited on other buffer layers. The periodicity and the sharpness at the interface between each layer were not as good as those in the multilayer with a Ni–Fe buffer. Therefore, the multilayer with a Si buffer exhibited smaller resistivity ρ but slightly smaller change of resistivity Δρ. The annealing process improved the periodicity and the sharpness at the interface in the Co/Cu multilayer with a Si buffer, and the value of the magnetoresistance ratio in the multilayer with a Si buffer (17.1%) became larger than that with Ni–Fe (15.5%). © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.373281