Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
86 (1999), S. 1145-1148
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on the structural and optical properties of Ge/Si self-assembled quantum dots epitaxially grown on Si(001). The Ge islands are grown in an industrial 200 mm single-wafer chemical vapor deposition reactor. The surface density of the Ge islands is as much as 2×1010 cm−2. The islands exhibit a maximum photoluminescence at 1.55 μm wavelength. The photoluminescence energy is correlated to the three-dimensional quantum confinement energy and to the size and geometry of the clusters, as observed by cross-section transmission electron microscopy. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.370856
Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |