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  • 1
    Electronic Resource
    Electronic Resource
    Quantitative analysis of excitonic photoluminescence in nitrogen-doped ZnSe epilayers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 1775-1779 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the photoluminescence (PL) properties of nitrogen-doped ZnSe epilayers grown by molecular beam epitaxy using a nitrogen radio frequency-plasma source. The PL data shows that the relative intensity of the donor-bound exciton (I2) emission to the acceptor-bound exciton (I1) emission strongly depends on both the excitation power and the temperature. This result is explained by a thermalization model of the bound exciton which involved in the capture and emission between the neutral donor bound exciton, the neutral acceptor bound exciton and the free exciton. Quantitative analysis with the proposed mechanism is in good agreement with the experimental data. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369323
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