Digitale Medien
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
78 (1995), S. 3680-3685
ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
This article compares the nature of phosphorus antisite defects in as-grown and neutron irradiated GaP crystals. Electron spin resonance studies indicate that these defects in both kinds of crystals have identical close neighbors consisting of four phosphorus atoms. Neutron irradiation of GaP introduced an additional defect (called WA1), which is linked to a gallium antisite. Characteristic absorption bands and conductivity of neutron irradiated GaP crystals are discussed as well. © 1995 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.359945
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