ZIB

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

A field-assisted emission model of interface states in heterostructure devices (1995)

Mohajerzadeh, S. ; Selvakumar, C. R. ; Noel, J. P. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 78 (1995), S. 7382-7386

add to mindlist on the mindlist

Details

ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We present a physical model to study the interface states in p-n heterostructures at different ambient temperatures. Field-assisted emission of such states is considered as the source for the linear increase in charge concentration at the p-n interface with the applied reverse voltage. The high frequency capacitance-voltage technique is used to study the charging and discharging of interface states in an MBE-made sample at different temperatures and different biases. The experimental results show good agreement with the prediction of our model. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.360725

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit