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Electron irradiation of two-terminal, monolithic InP/Ga0.47In0.53As tandem solar cells (1995)

Cotal, H. L. ; Walters, R. J. ; Summers, G. P. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 77 (1995), S. 2173-2176

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Results are presented for 1 MeV electron-irradiated, two terminal, monolithic InP/Ga0.47In0.53As tandem solar cells. These highly efficient prototype cells show radiation resistance that is comparable to single junction InP cells. A current mismatch between the subcells does not occur until high fluence levels, that is, near 3×1015 e−/cm2. This value for the onset of current mismatch and the measured remaining absolute efficiency of 9.4% at 1×1016 e−/cm2 are excellent results reported for a tandem cell designed for space applications. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.358795

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