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Strain-induced effects in (111)-oriented InAsP/InP, InGaAs/InP, and InGaAs/InAlAs quantum wells on InP substrates (1995)

Chen, W. Q. ; Hark, S. K.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 77 (1995), S. 5747-5750

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Strain-induced effects in quantum wells of InAsxP1−x/InP, InxGa1−xAs/InP, and InxGa1−xAs/ In0.52Al0.48As on (111) InP substrates are investigated. The strain induces a large piezoelectric field in these structures, and causes a large change in their energy band edges. Consequently the band structure of the quantum wells is dramatically modified, and the dependence of interband transition energies on alloy composition is different from that of quantum wells on (100) substrates. Moreover, a larger critical layer thickness is found for the quantum wells studied. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.359219

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