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Strain effects in high-purity InP epilayers grown on slightly mismatched substrates (1994)

Watkins, S. P. ; Arès, R. ; Masut, R. A. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 75 (1994), S. 2460-2465

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The growth of high-purity InP on various As-, S-, and Fe-doped InP substrates has been investigated using high-resolution photoluminescence spectroscopy (PL) and high-resolution x-ray diffractometry. Substrate induced strains of −7×10−5 or less have been observed using low-temperature PL. In this way information about the strain dependence of the electronic excited states of the donor bound excitons in InP was obtained. In addition, it was shown that the assessment of variations in substrate lattice parameter can be determined with a resolution of at least 5×10−6 by PL techniques.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.356271

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