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Deposited silicon nitride with low electron trapping rates (1993)

Park, Y. C. ; Jackson, W. B. ; Smith, D. L. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 74 (1993), S. 381-386

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Details

ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: In this article, nitrogen-rich silicon nitride plasma deposited under conditions minimizing Si—H bonding is shown to possess extremely low bulk electron trapping rates which are as low or lower than plasma-deposited oxides produced using He dilution. The bulk trap density, measured by avalanche injection decreases as the rf power is decreased. The total charge trapped within these silicon nitrides reaches a saturation value determined by high field detrapping in thick nitride films.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.354121

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