Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
73 (1993), S. 4086-4088
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The grain boundary trap state density is evaluated in polysilicon thin-film transistors by a method based on the dependence of the grain boundary potential barrier height on the gate voltage. Assuming a Gaussian energy distribution of the grain boundary trap states, the distribution parameters are determined by fitting the grain boundary barrier height experimental data with the theory. In low-pressure chemical vapor deposited polysilicon films, the influence of deposition pressure on the grain boundary trap distribution is examined by using this method. A large number of traps exist at the grain boundaries near the midgap of the material deposited at lower pressure due probably to an increased impurity contamination.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.352836
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