Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
70 (1991), S. 2195-2199
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Continuous tuning over the entire 8–12 μm wavelength range is demonstrated for the intersubband absorption resonance in n-doped GaAs/AlxGa1−xAs multiple quantum-well structures following partial interdiffusion of the well and barrier layers via rapid thermal annealing. The data indicate that redshifting of the intersubband absorption resonance arises both from interdiffusion-induced modification of the confining potential and from a decrease in the depolarization shift. The latter effect is due in part to a decrease in the free-carrier concentration within the Si-doped quantum wells following rapid thermal annealing. Significant diffusion of the localized Si dopant is also observed over the range of annealing temperatures investigated here. Calculated values of the Al-Ga interdiffusion coefficient, as a function of anneal temperature, indicate that Si diffusion through the heterointerfaces contributes substantially to layer intermixing.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.350334
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