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Sources of donor impurities in undoped GaAs grown using arsine and trimethylgallium (1991)

Watkins, S. P. ; Haacke, G.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 69 (1991), S. 1625-1630

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Magnetophotoluminescence spectroscopy (MPL) has been used to ascertain the source of donor impurities in high-purity GaAs grown by atmospheric pressure metalorganic vapor deposition using arsine and trimethylgallium. A linear correlation between absolute MPL intensity and net carrier concentration for high-purity n-type epilayers over the concentration range 1×1014–2×1015 cm−3 provided an unambiguous method for identifying the source of donor impurities by comparing epilayers grown with different source batches. Batch-to-batch variations in the quality of films grown with eight different arsine cylinders were traced directly to the presence of varying amounts of a Ge-containing contaminant in the arsine.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.347259

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