Digitale Medien
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
68 (1990), S. 3040-3043
ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
We have fabricated an InAs/AlSb/GaSb single-barrier interband tunneling diode by molecular beam epitaxy. In this structure, a large tunneling current can be obtained by taking the advantage of the large heterojunction-conduction band to valence band overlap (0.15 eV) between InAs and GaSb which offers flexible designs of the AlSb barrier thickness and the doping concentrations. We have obtained a negative differential resistance with a peak-to-valley current ratio as high as 4.7 and a peak current density of 3.5 kA/cm2 at room temperature with a 1.5-nm-thick AlSb barrier. The current transport mechanism in this tunneling structure will be discussed according to the I-V characteristics as a function of temperature.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.346396
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