ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
Oxide layers grown on surfaces of gas-evaporated Si particles as small as 100 A(ring) have been investigated. Results of high-resolution electron microscopy and x-ray photoemission spectroscopy show that the native oxide layer (SiOx) is about 20 A(ring) thick and its chemical composition x is around 1.2. When the particles are annealed in air at 400 °C, the thickness of the oxide layers remains almost the same while the composition x increases up to 2 as the annealing time increases. The evolution of the oxide takes place during the first 15 min of annealing. Due to the increase in x, the infrared absorption band in the region of Si-O-Si stretching vibration shifts to higher frequencies and increases in intensity. A comparison of experimental infrared spectra with those calculated by an effective medium theory suggests that the observed large width of the absorption band is caused by the particle aggregation.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.347022
