Digitale Medien
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
67 (1990), S. 1779-1783
ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
The incorporation of Si in ion-implanted and thermally annealed GaAs has been studied by local vibrational mode spectroscopy. Raman scattering and Fourier transform IR absorption have been used to analyze the Si site distribution both in the near surface region and averaged over the whole implanted layer, respectively. The samples implanted with doses of 5×1014 –1016 cm−2 were annealed with various techniques using different capping layers. The Si site distribution is found to depend strongly on the details of the annealing. In particular, capping with SiO2 leads to the formation of the so-called Si-X defect complex in addition to the incorporation of Si on both lattice sites and the formation of nearest-neighbor Si pairs.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.345603
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