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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 15 (1978), S. 399-407 
    ISSN: 1432-0630
    Keywords: 76.50+g ; 78.30 Ly
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Brillouin scattering from thermally excited magnons and ferromagnetic resonance are used to determine the spin wave dispersion of the low-frequency spin wave branch in FeBO3, a transparent weak ferromagnet. In addition to the dominant exchange and Zeeman contributions, the investigation takes into account magnetic dipole and magnetoelastic interactions. Due to the antisymmetric exchange enhancement the material exhibits a broad spin wave band and a large gap energy at small magnetic fields. Competing directional dependences of the dipole and the exchange energy produce a degeneracy of spin waves with a certain magnitude of the wavevector propagating in different directions. The gap energy is shown to be due to magnetoelastic coupling, whereas the contribution of the anisotropy in the easy plane is negligible atT=300 K.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 23 (1980), S. 195-198 
    ISSN: 1432-0630
    Keywords: 75.80+q ; 62.20 Dc
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The weak ferromagnet FeBO3 exhibits a strong dependence of the transverse sound velocity on the external magnetic field. This dependence has been measured for phonons up to the GHz region. The results can be explained satisfactorily by the interaction of the phonon and magnon dispersion branches.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 37 (1985), S. 73-82 
    ISSN: 1432-0630
    Keywords: 75 ; 75.70 ; 78.35
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Spin waves which are characteristic of periodic structures of thin ferromagnetic Co films alternating with nonmagnetic Nb films have been investigated by means of Brillouin light scattering. The dependence of the magnon frequencies on the magnetic inplane field and on the wave-vector was measured for several samples with different numbers and thicknesses of the layers. The experimental data are in good agreement with a theory of magnetostatic surface spin waves in such media elaborated by Grünberg and Mika. The amplitudes of the transverse magnetization in the different layers of the stack have been calculated. The highest frequency branch resembles the Damon-Eshbach surface magnon. With decreasing frequency the branches acquire volume mode character. In addition, a number of phonon branches has been observed which are interpreted as plate modes of the combined Co-Nb layer on the Si substrate.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 26 (1981), S. 19-22 
    ISSN: 1432-0630
    Keywords: 76.50.+g ; 78.20 Nv
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A commercial ESR spectrometer was modified to detect the photoacoustic signal of modulated magnetic resonance absorption, operating at room temperature and at atmospheric pressure. Both magnetically ordered materials (YIG and FeBO3) and paramagnetic substances were investigated. The measurements include various phenomena of ferromagnetic resonance: uniform precession, magnetostatic modes and spin-wave instabilities. Paramagnetic resonance was observed in the concentrated system MnF2 and in the diluted system ZnS : Mn (1%), with well resolved hyperfine splitting.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 42 (1987), S. 45-55 
    ISSN: 1432-0630
    Keywords: 75 ; 75.70 ; 78.35
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The spectrum of magnetostatic surface spin waves of a stack of magnetic and nonmagnetic layers is investigated theoretically. The calculation treats a very general case: each layer is allowed to be of different thickness, magnetization and magnetocrystalline anisotropy. Some interesting spezial cases are discussed in detail.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physica B+C 89 (1977), S. 213 
    ISSN: 0378-4363
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physics Letters A 35 (1971), S. 64-65 
    ISSN: 0375-9601
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2941-2946 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The anisotropic conduction of GaAs/In0.2Ga0.8As/Al0.3Ga0.7As inverted high-electron-mobility transistor (HEMT) structures has been investigated. The heterostructures were grown by molecular-beam epitaxy on (100) GaAs substrates. The thickness of the pseudomorphic layer was increased stepwise (150–300 A(ring)) beyond the critical layer thickness as determined by the appearance of misfit dislocations. These mixed 60° dislocations surrounded by depletion regions were observed as straight dark lines in cathodoluminescence. The measured resistance Rs was higher in the [01¯1] direction than in the perpendicular [011] direction. At T=30 K the conduction ratio of these two directions exceeded 105 in the 300-A(ring)-thick layer. The magnitude and anisotropy of Rs was correlated with the anisotropic dislocation patterns resulting from the preferential generation of the α dislocations (parallel) [011] as compared to the orthogonal β dislocations (parallel) [01¯1]. In both directions Rs depended exponentially on the number of dark lines perpendicular to the probing current. Simultaneously, the functional form of the temperature-dependent Rs(T) strongly varied with layer thickness. The thin, still elastically strained layers showed the usual behavior of HEMT structures. For the thicker layers a completely different temperature dependence was gradually developing, eventually leading to an exponential increase of Rs with inverse temperature between 300 and 100 K. Below this range Rs(1/T) changed more slowly and leveled off at 30 K. All these features are convincingly explained by a model assuming that the electrons can surmount the insulating depletion barriers in the conducting channel by a thermally induced tunneling mechanism.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thickness effects of the InGaAs channel on photoluminescence and transport properties of δ-doped Al0.3Ga0.7As/In0.3Ga0.7As heterostructures are investigated. The spreading of the Si δ-doping layer is deduced from a comparison of the measured charge with self-consistent calculations assuming a Gaussian Si distribution profile and a definite ionization probability of the Si-related DX centers. With decreasing channel thickness below 80 A(ring), the effect of the spreading on the sheet carrier concentration increases and the low temperature mobility decreases due to roughness scattering at the In0.3Ga0.7As/GaAs interface. In channels thicker than 80 A(ring) the thickness-independent alloy scattering process dominates.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1430-1434 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature Te of photoexcited carriers in semi-insulating GaAs wafers is determined with high lateral resolution by topographic measurement of the spectrally selected band-to-band recombination luminescence intensity IPL. It is also calculated from a detailed balance between carrier excitation and recombination, taking into account optical phonon, electron-electron, piezoelectric, and acoustic phonon scattering processes. Comparison of the experimental and theoretical Te data yields the lifetime τ of the photoexcited carriers, which is thus obtained without time-resolved measurement. The lifetime results are corroborated by comparison of the measured and calculated dependence of Te on the laser excitation power. The relation between Te and τ for given excitation power allows for the generation of two-dimensional high-resolution lifetime topograms. The correlation with conventional IPL topograms is direct, duplicating the lateral cellular pattern with comparable fluctuation amplitude. From these properties, it is inferred that τ is dominantly determined by inhomogeneously distributed nonradiative recombination centers. Their concentration is low in the walls of the dislocation network and high in the interior of the cells. The statistical evaluation of Te topograms allows for an application-oriented comparison of the quality and homogeneity of GaAs wafers.
    Type of Medium: Electronic Resource
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