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  • 1
    Electronic Resource
    Electronic Resource
    High resolution carrier temperature and lifetime topography of semi-insulating GaAs using spatially and spectrally resolved photoluminescence (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1430-1434 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature Te of photoexcited carriers in semi-insulating GaAs wafers is determined with high lateral resolution by topographic measurement of the spectrally selected band-to-band recombination luminescence intensity IPL. It is also calculated from a detailed balance between carrier excitation and recombination, taking into account optical phonon, electron-electron, piezoelectric, and acoustic phonon scattering processes. Comparison of the experimental and theoretical Te data yields the lifetime τ of the photoexcited carriers, which is thus obtained without time-resolved measurement. The lifetime results are corroborated by comparison of the measured and calculated dependence of Te on the laser excitation power. The relation between Te and τ for given excitation power allows for the generation of two-dimensional high-resolution lifetime topograms. The correlation with conventional IPL topograms is direct, duplicating the lateral cellular pattern with comparable fluctuation amplitude. From these properties, it is inferred that τ is dominantly determined by inhomogeneously distributed nonradiative recombination centers. Their concentration is low in the walls of the dislocation network and high in the interior of the cells. The statistical evaluation of Te topograms allows for an application-oriented comparison of the quality and homogeneity of GaAs wafers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353241
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  • 2
    Electronic Resource
    Electronic Resource
    Anisotropic electrical conduction in GaAs/In0.2Ga0.8As/Al0.3Ga0.7As strained heterostructures beyond the critical layer thickness (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2941-2946 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The anisotropic conduction of GaAs/In0.2Ga0.8As/Al0.3Ga0.7As inverted high-electron-mobility transistor (HEMT) structures has been investigated. The heterostructures were grown by molecular-beam epitaxy on (100) GaAs substrates. The thickness of the pseudomorphic layer was increased stepwise (150–300 A(ring)) beyond the critical layer thickness as determined by the appearance of misfit dislocations. These mixed 60° dislocations surrounded by depletion regions were observed as straight dark lines in cathodoluminescence. The measured resistance Rs was higher in the [01¯1] direction than in the perpendicular [011] direction. At T=30 K the conduction ratio of these two directions exceeded 105 in the 300-A(ring)-thick layer. The magnitude and anisotropy of Rs was correlated with the anisotropic dislocation patterns resulting from the preferential generation of the α dislocations (parallel) [011] as compared to the orthogonal β dislocations (parallel) [01¯1]. In both directions Rs depended exponentially on the number of dark lines perpendicular to the probing current. Simultaneously, the functional form of the temperature-dependent Rs(T) strongly varied with layer thickness. The thin, still elastically strained layers showed the usual behavior of HEMT structures. For the thicker layers a completely different temperature dependence was gradually developing, eventually leading to an exponential increase of Rs with inverse temperature between 300 and 100 K. Below this range Rs(1/T) changed more slowly and leveled off at 30 K. All these features are convincingly explained by a model assuming that the electrons can surmount the insulating depletion barriers in the conducting channel by a thermally induced tunneling mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351497
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  • 3
    Electronic Resource
    Electronic Resource
    Raman scattering study of low dose Si±-implanted GaAs used for metal-semiconductor field-effect transistor fabrication (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1904-1906 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The annealing of the lattice damage introduced by Si+ implantation into GaAs as well as the electrical activation of the dopant has been studied by Raman scattering. Implantation doses (4×1012–1×1013 cm−2) and annealing conditions (800–1040 °C for 5 s) were used which are typical for GaAs metal-semiconductor field-effect transistor fabrication. The normalized peak intensity of the longitudinal optical (LO) phonon-plasmon coupled mode is found to correlate with the sheet of conductivity, i.e., it probes the electrical activation. The lattice perfection, in contrast, is most sensitively measured by resonant 2LO-phonon scattering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98506
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  • 4
    Electronic Resource
    Electronic Resource
    Preludes to spin-wave chaos: Spin-wave instability processes, butterfly curves, kinks, flips, cusps, and shifts (invited) (abstract) (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5401-5401 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Manifestations of chaos1–3 above the threshold microwave field for spin-wave instability have brought this established topic in microwave magnetics back into vogue. This paper will review the nature of the instability onset and the factors which determine the variation of the threshold microwave field for instability (hcrit) with dc field, the so-called "butterfly curve.'' A key factor here is the wave-vector k dependence of the spin-wave linewidth ΔHk. This k dependence leads to abrupt shifts in the wave number k for the unstable modes from large values (105 cm−1) to small values (103 cm−1) and a characteristic "kink'' in the subsidiary absorption butterfly curve. Under certain circumstances, flips in the aximuthal spin-wave propagation angle are also predicted. Such flips show up experimentally in some of the expected circumstances, but not in others.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342382
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  • 5
    Electronic Resource
    Electronic Resource
    Compensating vibrating reed magnetometer (invited) (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6002-6007 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new high-sensitivity magnetometer for susceptibility measurements in the temperature range 6–330 K has been developed. It uses the vibrating reed technique with amplitude sensing by piezoelements. The measurement is absolute because the magnetic moment of the sample is compensated by a loop current that is adjusted with a zero detection circuit. Dia-, para-, and ferromagnetic contributions can be evaluated simultaneously. The resolution for measuring magnetic moments is better than 10−7 emu, corresponding to a susceptibility of 10−11 cm3 at 10 kOe. Magnetic measurements of thin ferromagnetic films, diluted paramagnetic systems, and a superconducting material are presented to demonstrate the sensitivity and versatility of the system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342132
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Influence of delta-doping profile and interface roughness on the transport properties of pseudomorphic heterostructures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 907-909 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thickness effects of the InGaAs channel on photoluminescence and transport properties of δ-doped Al0.3Ga0.7As/In0.3Ga0.7As heterostructures are investigated. The spreading of the Si δ-doping layer is deduced from a comparison of the measured charge with self-consistent calculations assuming a Gaussian Si distribution profile and a definite ionization probability of the Si-related DX centers. With decreasing channel thickness below 80 A(ring), the effect of the spreading on the sheet carrier concentration increases and the low temperature mobility decreases due to roughness scattering at the In0.3Ga0.7As/GaAs interface. In channels thicker than 80 A(ring) the thickness-independent alloy scattering process dominates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110992
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  • 7
    Electronic Resource
    Electronic Resource
    Photoluminescence topography of shallow impurities in GaAs epilayers grown by metalorganic vapor phase epitaxy (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1609-1611 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectrally and spatially resolved low-temperature photoluminescence topography has been applied to investigate the lateral variation of impurities in nominally undoped epitaxial GaAs layers. The concentrations of both shallow donors and acceptors exhibit lateral variations. The donor variation pattern appears to be arbitrary, but the fluctuation of shallow acceptor carbon clearly reproduces the well-known cellular structure of the liquid encapsulated Czochralski GaAs substrate dislocation density distribution, suggesting that the carbon incorporation into the epitaxial layer is influenced by the substrate during the growth of metalorganic vapor phase epitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107216
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  • 8
    Electronic Resource
    Electronic Resource
    Dopant incorporation in Si-implanted and thermally annealed GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1779-1783 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation of Si in ion-implanted and thermally annealed GaAs has been studied by local vibrational mode spectroscopy. Raman scattering and Fourier transform IR absorption have been used to analyze the Si site distribution both in the near surface region and averaged over the whole implanted layer, respectively. The samples implanted with doses of 5×1014 –1016 cm−2 were annealed with various techniques using different capping layers. The Si site distribution is found to depend strongly on the details of the annealing. In particular, capping with SiO2 leads to the formation of the so-called Si-X defect complex in addition to the incorporation of Si on both lattice sites and the formation of nearest-neighbor Si pairs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345603
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  • 9
    Electronic Resource
    Electronic Resource
    Photoluminescence microscopy investigation of lattice defects in epitaxial heterostructures
    Amsterdam : Elsevier
    Journal of Crystal Growth 126 (1993), S. 205-215 
    Details
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-0248(93)90027-T
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  • 10
    Electronic Resource
    Electronic Resource
    MBE growth optimization of In"yGa"1"-"yAs/GaAs multiple quantum well structures
    Amsterdam : Elsevier
    Journal of Crystal Growth 127 (1993), S. 541-545 
    Details
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-0248(93)90679-Q
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