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  • 1
    Electronic Resource
    Electronic Resource
    Sputtering during ion implantation into gallium arsenide (1975)
    Springer
    Applied physics 7 (1975), S. 39-44 
    Details
    ISSN: 1432-0630
    Keywords: Sputtering-Ion implantation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The surface erosion caused by ion bombardment of solids and its effect on the number of ions retained in the solid was studied experimentally for a variety of ions implanted into GaAs with various fluences and energies. Experimental methods were interferometry and semi quantitative X-ray analysis by means of an electron microprobe. By an easy-to-use computer calculation the change in the implantation profiles was determined and the number of retained ions were related to the surface shift caused by sputtering. Comparison of this shift with the real erosion found before and after annealing was made. From the results, we conclude that the collapse of the crystal lattice contributes to the sinking of the bombarded surface. Sputtering data necessary to estimate the technical consequences of sputtering, range data of 100 keV Fe ions, and data indicating the sensitivity of X-ray analysis are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00900518
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  • 2
    Electronic Resource
    Electronic Resource
    Anisotropic electrical conduction in GaAs/In0.2Ga0.8As/Al0.3Ga0.7As strained heterostructures beyond the critical layer thickness (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2941-2946 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The anisotropic conduction of GaAs/In0.2Ga0.8As/Al0.3Ga0.7As inverted high-electron-mobility transistor (HEMT) structures has been investigated. The heterostructures were grown by molecular-beam epitaxy on (100) GaAs substrates. The thickness of the pseudomorphic layer was increased stepwise (150–300 A(ring)) beyond the critical layer thickness as determined by the appearance of misfit dislocations. These mixed 60° dislocations surrounded by depletion regions were observed as straight dark lines in cathodoluminescence. The measured resistance Rs was higher in the [01¯1] direction than in the perpendicular [011] direction. At T=30 K the conduction ratio of these two directions exceeded 105 in the 300-A(ring)-thick layer. The magnitude and anisotropy of Rs was correlated with the anisotropic dislocation patterns resulting from the preferential generation of the α dislocations (parallel) [011] as compared to the orthogonal β dislocations (parallel) [01¯1]. In both directions Rs depended exponentially on the number of dark lines perpendicular to the probing current. Simultaneously, the functional form of the temperature-dependent Rs(T) strongly varied with layer thickness. The thin, still elastically strained layers showed the usual behavior of HEMT structures. For the thicker layers a completely different temperature dependence was gradually developing, eventually leading to an exponential increase of Rs with inverse temperature between 300 and 100 K. Below this range Rs(1/T) changed more slowly and leveled off at 30 K. All these features are convincingly explained by a model assuming that the electrons can surmount the insulating depletion barriers in the conducting channel by a thermally induced tunneling mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351497
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  • 3
    Electronic Resource
    Electronic Resource
    Influence of interdiffusion processes on optical and structural properties of pseudomorphic In0.35Ga0.65As/GaAs multiple quantum well structures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6818-6825 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interdiffusion has been investigated in molecular-beam epitaxially (MBE)-grown, highly strained In0.35Ga0.65As/GaAs multiple quantum well (MQW) structures. Thermal intermixing and impurity-free interdiffusion (IFID) was induced via rapid thermal annealing (RTA) at temperatures between 700 and 950 °C using GaAs proximity caps and electron-beam evaporated SiO2 cap layers, respectively. Both reduced photoluminescence (PL) linewidths and increased PL intensities were observed following interdiffusion-induced band-gap shifts ranging from 6 to 220 meV. PL microscopy (PLM) investigations were utilized to study the onset of strain relaxation due to dislocation generation. Two types of line defects were found in the proximity-cap annealed samples, depending on the annealing temperature and the number of QWs: misfit dislocations with the dislocation lines parallel to 〈110〉 directions and 〈100〉-oriented line defects. No dislocations were observed in the SiO2-cap annealed samples over the entire temperature range investigated here. Resonant Raman scattering measurements of the 1LO/2LO phonon intensity ratio were used for a semiquantitative assessment of the total defect densities, including point defects (PDs). Whereas increasing PD densities and the formation of line defects were observed in the proximity-capped samples as the annealing temperature was increased, no deterioration of the structural quality due to an increased PD density was observed in the case of the SiO2-cap annealed samples. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361503
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  • 4
    Electronic Resource
    Electronic Resource
    Spatial distribution of residual shallow acceptors in undoped semi-insulating GaAs (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 5225-5227 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spatial distribution of residual shallow acceptors in undoped semi-insulating GaAs has been studied quantitatively by electronic Raman scattering with a spatial resolution of ∼50 μm. This acceptor distribution has been correlated with the spatial distribution of the compensating EL2 donor in its neutral charge state measured by near-IR absorption topography. An enhanced acceptor concentration is found in regions which show high-IR absorption: From the comparison with low-temperature cathodoluminescence results, it is found that the intensity of the band-to-acceptor recombination normalized to the band-to-band luminescence intensity reproduces the acceptor distribution measured by Raman scattering. Implications of the present result on the compensation model for undoped semi-insulating GaAs are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343161
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  • 5
    Electronic Resource
    Electronic Resource
    Growth of high quality Al0.48In0.52As/Ga0.47In 0.53As heterostructures using strain relaxed AlxGayIn1−x−yAs buffer layers on GaAs (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 412-414 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Morphological and physical properties of Al0.48In0.52As/Ga 0.47In0.53As heterostructures grown by molecular beam epitaxy, lattice relaxed on GaAs substrates and lattice matched on InP substrates, are presented. Both a quaternary linear and step graded lattice relaxed buffer concept is implemented to accomodate the lattice mismatch between the GaAs substrate and the Al0.48In0.52As/Ga 0.47In0.53As layer sequence. The surface morphology and the transport properties of Al0.48In0.52As/Ga0.47In0.53As high electron mobility transistor structures were studied by atomic force microscopy and Hall effect measurements, respectively. Optical properties were investigated by low temperature photoluminescence experiments on quantum well structures. The linear graded buffer approach was found to result in superior heterostructure properties due to the two dimensional growth mode during the whole growth process resulting in the typical cross hatched surface morphology. In contrast, the use of step graded buffer layers resulted in three dimensional layer growth and inferior layer quality. However, by increasing the number of steps, i.e., reducing the change in the lattice constant for each step and thus approaching a linear grading, two dimensional growth is recovered. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118078
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  • 6
    Electronic Resource
    Electronic Resource
    Highly anisotropic electron mobilities of GaAs/In0.2Ga0.8As/Al0.3Ga0.7As inverted high electron mobility transistor structures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2736-2738 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Anisotropic electron mobilities for GaAs/In0.2Ga0.8As/Al0.3Ga0.7As inverted high electron mobility transistor structures were observed using Hall effect measurements. If the In0.2Ga0.8As quantum-well thickness is below the critical layer thickness, a higher electron mobility in the 〈01–1〉 direction is observed in comparison to the 〈011〉 direction. Exceeding the critical layer thickness of the In0.2Ga0.8As quantum well results in a change in the behavior of the anisotropy, and a highly anisotropic electron mobility with a higher electron mobility in the 〈011〉 direction, in comparison to the 〈01–1〉 direction, is observed. With increasing In0.2Ga0.8As quantum-well width, the anisotropy increases. An increase of the anisotropy was also observed if the Hall-effect measurements were carried out at lower temperatures. The anisotropy in the electron mobility can be correlated to the occurrence of a highly asymmetric-dislocation density. The asymmetry in the dislocation density was observed using wavelength-selective catholuminescence measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105900
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  • 7
    Electronic Resource
    Electronic Resource
    Growth and characterization of ZnSe grown on GaAs by hot-wall epitaxy
    Amsterdam : Elsevier
    Journal of Crystal Growth 101 (1990), S. 180-184 
    Details
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-0248(90)90961-J
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  • 8
    Electronic Resource
    Electronic Resource
    Characterization of CdTe crystals by chemical etching and cathodoluminescence measurements
    Amsterdam : Elsevier
    Journal of Crystal Growth 101 (1990), S. 226-231 
    Details
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-0248(90)90971-M
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  • 9
    Electronic Resource
    Electronic Resource
    OMVPE-grown (Al"xGa"1"-"x)"0"."5In"0"."5P/InGaAs MODFET structures: growth procedure and Hall properties
    Amsterdam : Elsevier
    Journal of Crystal Growth 124 (1992), S. 817-823 
    Details
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-0248(92)90557-Y
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  • 10
    Electronic Resource
    Electronic Resource
    Enhancements in MBE-grown high-speed GaAs and In"0"."3"5Ga"0"."6"5As MQW laser structures using binary short-period superlattices
    Amsterdam : Elsevier
    Journal of Crystal Growth 127 (1993), S. 19-24 
    Details
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-0248(93)90569-I
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