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Physics and design of hot-electron spectrometers and transistors (1989)

Beton, P. H. ; Long, A. P. ; Kelly, M. J.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 65 (1989), S. 3076-3079

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We explain how Monte-Carlo simulations may be used to calculate the transfer characteristics of GaAs hot-electron transistors, from which hot-electron spectra may be derived. We present such spectra for a range of doping densities and injection energies for a base width of 500 A(ring). We compare our results with those derived from other theories and suggest an experiment which should indicate their relative validity. Optimum parameters for base width and doping for high-frequency hot-electron transistors are derived and compared with available experimental data.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.342702

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