ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The conductivity of undoped low-pressure chemically vapor deposited polycrystalline silicon films has been investigated in the temperature range 77–300 K as a function of the deposition conditions of the film. At low temperatures hopping conductivity has been identified. Decrease of the deposition pressure of the polysilicon film shifts the hopping region to lower temperatures and reduces the density of localized trap states and, also, the degree of disorder.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.341799