Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
63 (1988), S. 732-742
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The phosphorus redistribution in a WSi2/polycrystalline-silicon structure after furnace annealing between 600 and 1000 °C was studied. When P is initially introduced into the polycrystalline-silicon, a secondary ion mass spectroscopy analysis shows a nearly equidistribution of the dopant within the sandwich. When the silicide layer is phosphorus implanted, it has been clearly shown that with the refractory metal the dopant forms a tungsten phosphide compound more stable than WSi2 up to a critical temperature Tc. The stability of the phosphide increases with the implanted dose. A complete characterization of the additional phase was obtained by thermal annealing of W-Si-P powders. Several other interesting features on the redistribution of the dopant in the polycrystalline-silicon/silicide structure have been established and discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.340065
| Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |
